DMTH69M8LFVWQ-7

$0.91

Description：MOSFET BVDSS: 41V-60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7a43427d64c7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15.9A (Ta), 45.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 29.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH69M8LFVWQ-7

Overview

The DMTH69M8LFVWQ-7 is a 60V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 9.5mΩ at VGS=10V and 13.3mΩ at VGS=4.5V. The device supports a continuous drain current of 45.4A at TC=25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 33.5nC at VGS=10V, and a maximum power dissipation of 3.6W at TA=25°C.

Feature Summary

Rated for operation up to +175°C junction temperature for high ambient environments
100% unclamped inductive switching (UIS) tested in production for reliability
Small form factor thermally efficient package enables higher density end products
Wettable flank design facilitates improved optical inspection

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2000-unit tape and reel while other suffixes may denote different quantities. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if the application demands automotive-grade compliance. Ensure the final assembly process accommodates the specified moisture sensitivity level and solderability standards defined in the datasheet.

Selection Notes

Select this component when a compact surface-mount solution with robust thermal performance is required for automotive or industrial circuits. The low on-resistance minimizes conduction losses, making it suitable for high-current applications. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance characteristics and PCB layout constraints associated with the exposed drain pad for effective heat dissipation.

Part Context

This part belongs to the DMTH69 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI3333-8/SWP package. The device is designed to meet stringent automotive application requirements and is produced in IATF 16949 certified facilities. It is fully RoHS compliant and halogen-free.