DMTH69M9LPDW-13

Overview

The DMTH69M9LPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 60 V and supports a continuous drain current (Id) of 49 A. Its on-resistance (Rds(on)) is specified at 16.8 mOhms, with a gate threshold voltage (Vgs(th)) of 2 V. The maximum gate-source voltage (Vgs) range is -16 V to +16 V, and the total gate charge (Qg) is 32 nC. Thermal performance includes a power dissipation (Pd) of 51.7 W, operating within a temperature range of -55 °C to +175 °C. Switching characteristics include a rise time of 25.7 ns, fall time of 38 ns, and turn-off delay of 51.5 ns.

Feature Summary

• Single N-channel configuration integrated into a compact PowerDI5060-8 surface-mount package for efficient board space utilization.
• Enhanced thermal management capabilities through a low-profile design that facilitates heat dissipation from the top surface.
• Optimized switching dynamics with defined rise, fall, and delay times suitable for high-frequency power conversion applications.

Applications

• DC-DC converter circuits requiring efficient step-down or step-up voltage regulation.
• Synchronous rectification stages in power supply modules.
• Motor control systems utilizing low-voltage drive signals.

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number DMTH69M9LPDW-13 with official Diodes Incorporated documentation. Confirm the specific suffix indicates the standard tape-and-reel packaging format. Ensure the received units match the PowerDI5060-8 physical dimensions and pinout configuration before integration into the final assembly process.

Selection Notes

Select this component when a single N-channel MOSFET with a 60 V rating and approximately 17 mOhm on-resistance is required. The PowerDI5060-8 package offers a balance between current handling capacity and footprint size. Consider the 49 A continuous current rating and 175 °C junction temperature limit for thermal design calculations in constrained environments.

Part Context

This component belongs to the DMTH series of MOSFETs from Diodes Incorporated, designed for general-purpose power switching. The DMTH69M9LPDW-13 variant specifically targets applications needing moderate voltage blocking with low conduction losses. It complements other devices in the lineup by providing a single-channel solution in a standardized small outline package.

Replacement Considerations

No official substitute part numbers are documented for this specific model. When evaluating alternatives, ensure compatibility with the 60 V drain-source voltage, 49 A current rating, and 16.8 mOhm on-resistance specifications. Verify that any replacement maintains the same PowerDI5060-8 footprint and pin assignment to avoid PCB redesign requirements.