DMTH83M2SPSW-13

$0.89

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:32a315864258 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5466 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH83M2SPSW-13

Overview

The DMTH83M2SPSW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 165A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 2.9mΩ max at VGS = 10V and 5.3mΩ max at VGS = 6V. Total gate charge (Qg) is 87nC. Operating temperature range spans from -55°C to +175°C.

Feature Summary

Engineered for high conversion efficiency with minimized on-state losses through low RDS(ON).
Maintains superior switching performance characterized by fast switching speeds and low input capacitance.
Manufactured with lead-free finish, RoHS compliant, and halogen/antimony free construction.

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component matches the standard automotive-grade specification rather than the separate automotive-compliant variant (DMTH83M2SPSWQ), as datasheet details may differ between these part numbers.

Selection Notes

Select this component for power management applications requiring robust handling of high continuous currents up to 165A. Ensure the design accommodates the 80V drain-source voltage rating and utilizes the PowerDI5060-8 package's thermal capabilities for junction-to-case dissipation. Verify gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.

Part Context

This device belongs to the DMTH series of N-channel enhancement mode MOSFETs designed for automotive and industrial environments. It represents a newer generation optimized to balance low conduction losses with efficient switching characteristics. The PowerDI5060-8 package provides a compact footprint suitable for surface-mount assembly on FR-4 substrates.

Replacement Considerations

Consult the official datasheet for the automotive-compliant alternative part number DMTH83M2SPSWQ if AEC-Q101 qualification or specific automotive reliability standards are required for the end application.

FAQ

Is the DMTH83M2SPSW-13 qualified under automotive standards?

No, the standard DMTH83M2SPSW-13 is not explicitly stated as automotive-compliant. An automotive-compliant version is available separately under the part number DMTH83M2SPSWQ.