DRF1310

Overview

The DRF1310 is an RF MOSFET transistor manufactured by Microchip Technology. It is a push-pull hybrid device designed for high-power radio frequency applications. The component utilizes Silicon (Si) technology and features an N-channel configuration. Key electrical specifications include a drain-source breakdown voltage (Vdss) of 500 V, a maximum power dissipation (Pd) of 2 kW, and an operating frequency of 30 MHz.

Feature Summary

• Push-pull hybrid architecture integrating gate driver and power MOSFET
• High-voltage capability with 500 V drain-source breakdown
• High-power handling rated at 2 kW dissipation
• Designed for RF power amplification at 30 MHz

Applications

• RF power amplifier stages
• Industrial heating systems
• Radio frequency plasma generation

Procurement Notes

Verify the specific manufacturer designation, as some sources list this part under Microsemi, now part of Microchip Technology. Confirm the package type T4 availability and ensure compliance with current RoHS standards. Check regional distribution status as supply may vary by location.

Selection Notes

Select this component for applications requiring high voltage isolation and significant power output in the HF band. Ensure thermal management solutions are adequate for 2 kW dissipation. Verify that the 30 MHz operating frequency aligns with the system's signal requirements and impedance matching networks.

Part Context

This device belongs to the family of RF power MOSFET hybrids from Microchip. These components combine discrete power transistors with integrated drivers to simplify circuit design. They are distinct from standard logic-level MOSFETs due to their specialized RF characteristics and high-voltage ratings.

Replacement Considerations

Check for direct equivalents within the Microchip/ Microsemi RF MOSFET portfolio. Verify pin compatibility and electrical parameters such as Vdss and Pd when considering substitutes.