DU2810S

DU2810S

$39.10
  • Description:RF MOSFET LDMOS 28V
  • Series:-

SKU:8ca11c384fdd Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2MHz ~ 175MHz
  • Gain:13dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.8A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:4L-FLG
  • Supplier Device Package:-
  • Configuration:N-Channel

Download product information

DU2810S

Overview

The DU2810S is an RF MOSFET transistor manufactured by MACOM Technology Solutions. It is a dual N-channel silicon device designed for high-power radio frequency applications. The component operates within a frequency range of 2 MHz to 175 MHz. Key electrical specifications include a continuous drain current of 2.8 A, a drain-source breakdown voltage (Vds) of 65 V, and a maximum output power of 10 W. The device provides a gain of 13 dB and supports a maximum operating temperature of +200°C. It utilizes a screw mount installation style.

Feature Summary

  • Dual N-channel configuration for balanced RF signal processing
  • Silicon-based construction optimized for high-temperature stability up to +200°C
  • Capable of delivering 10 W output power with 13 dB gain in the HF/VHF bands

Applications

  • High-frequency amplifier stages in communication systems
  • RF power generation circuits operating below 175 MHz
  • Military and aerospace radio frequency equipment requiring rugged semiconductor components

Procurement Notes

Verify the specific datasheet revision and package marking against the manufacturer's official documentation before integration. Confirm that the screw mount interface matches the thermal management design of the target assembly. Ensure compliance with RoHS requirements as specified in the latest product release notes. Cross-reference the part number with authorized distributors to confirm authenticity and traceability.

Selection Notes

Select this component when designing circuits requiring dual N-channel RF MOSFETs with 10 W output capability at frequencies up to 175 MHz. Consider the 65 V drain-source voltage rating and 2.8 A continuous current limits during biasing calculations. Evaluate the screw mount packaging for compatibility with existing heatsinking infrastructure and mechanical constraints in the final enclosure design.

Part Context

The DU2810S belongs to MACOM's portfolio of RF MOSFET transistors engineered for robust performance in demanding radio frequency environments. It complements other devices in the series by offering a specific balance of power handling and frequency response suitable for HF and VHF spectrum operations. The dual-channel architecture allows for push-pull or balanced circuit topologies common in linear amplifier designs.

FAQ

What is the maximum operating temperature for the DU2810S?

The maximum operating temperature for the DU2810S is +200°C.

Does the DU2810S feature a single or dual channel configuration?

The DU2810S features a dual N-channel configuration.

What is the recommended installation method for this component?

The DU2810S is designed for screw mount installation.

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