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The DU2810S is an RF MOSFET transistor manufactured by MACOM Technology Solutions. It is a dual N-channel silicon device designed for high-power radio frequency applications. The component operates within a frequency range of 2 MHz to 175 MHz. Key electrical specifications include a continuous drain current of 2.8 A, a drain-source breakdown voltage (Vds) of 65 V, and a maximum output power of 10 W. The device provides a gain of 13 dB and supports a maximum operating temperature of +200°C. It utilizes a screw mount installation style.
Verify the specific datasheet revision and package marking against the manufacturer's official documentation before integration. Confirm that the screw mount interface matches the thermal management design of the target assembly. Ensure compliance with RoHS requirements as specified in the latest product release notes. Cross-reference the part number with authorized distributors to confirm authenticity and traceability.
Select this component when designing circuits requiring dual N-channel RF MOSFETs with 10 W output capability at frequencies up to 175 MHz. Consider the 65 V drain-source voltage rating and 2.8 A continuous current limits during biasing calculations. Evaluate the screw mount packaging for compatibility with existing heatsinking infrastructure and mechanical constraints in the final enclosure design.
The DU2810S belongs to MACOM's portfolio of RF MOSFET transistors engineered for robust performance in demanding radio frequency environments. It complements other devices in the series by offering a specific balance of power handling and frequency response suitable for HF and VHF spectrum operations. The dual-channel architecture allows for push-pull or balanced circuit topologies common in linear amplifier designs.
The maximum operating temperature for the DU2810S is +200°C.
The DU2810S features a dual N-channel configuration.
The DU2810S is designed for screw mount installation.