SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DU2820S is an N-channel silicon RF MOSFET transistor manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, it operates within a frequency range of 2 MHz to 175 MHz. The device delivers a continuous output power of 20 W with a gain of 13 dB at a test voltage of 28 V. It features a drain-source breakdown voltage (Vds) of 65 V and a continuous drain current (Id) of 24 A. The component supports a maximum operating temperature of +200°C and utilizes a screw mount installation style.
Verify the specific datasheet revision and package marking against the manufacturer's official documentation before integration. Confirm that the screw mount interface matches the mechanical design of the target heatsink assembly. Ensure that the gate drive circuitry is compatible with the device's input capacitance and threshold requirements to prevent instability or damage during operation.
Select this component when designing circuits requiring 20 W output power within the 2-175 MHz band. The 65 V drain-source voltage rating provides sufficient headroom for standard 28 V supply rails. Consider the screw mount packaging for thermal management solutions that utilize direct chassis mounting rather than surface-mount PCB techniques.
This part belongs to the DU2820 family of RF MOSFETs from MACOM. These devices are engineered for robust performance in demanding RF environments. The DU2820S variant specifically denotes the screw-mount package configuration, distinguishing it from other form factors within the same electrical specification family.
Consult MACOM official substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative manufacturers.