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The DU2840S is an RF power MOSFET transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of 2 MHz to 175 MHz and delivers an output power of 40 W. The device requires a bias voltage of 28 V and provides a gain of 13 dB. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V, a continuous drain current of 200 mA, and a gate-source threshold voltage of 6 V. The component supports a maximum operating temperature of +200°C and utilizes a chassis mount package designated as 4L-FLG.
Verify that the specific procurement channel guarantees original components from MACOM Technology Solutions. Confirm that the delivered units match the 4L-FLG chassis mount package specification. Ensure compatibility with the required 28 V bias voltage and thermal management solutions suitable for the +200°C maximum operating temperature rating before final integration.
Select this component when a 40 W output power level is required within the 2 MHz to 175 MHz operational bandwidth. The 13 dB gain and 65 V breakdown voltage support standard RF amplifier topologies. Consider the chassis mount form factor for mechanical stability and heat dissipation requirements in high-power applications compared to surface-mount alternatives.
The DU2840S belongs to the category of RF MOSFET transistors produced by MACOM Technology Solutions. These devices are designed for high-power radio frequency applications requiring reliable performance in demanding environments. The product line focuses on silicon-based semiconductor technology optimized for frequencies up to 175 MHz.
Public confirmed substitute part numbers are not available in the provided documentation.