DU2860U

Overview

The DU2860U is a silicon N-channel RF MOSFET transistor manufactured by MACOM Technology Solutions. Designed for high-power radio frequency applications, it operates within the 2 MHz to 175 MHz frequency range. The device delivers an output power of 60 W with a gain of 13 dB. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V and a continuous drain current (Id) of 12 A. It supports a maximum operating temperature of +200°C and utilizes a screw mount installation style.

Feature Summary

• High thermal stability supporting operation up to +200°C
• Optimized for broadband RF power amplification in the 2-175 MHz band
• Robust N-channel silicon construction for reliable performance

Applications

• Broadband RF power amplifiers
• Wireless communication systems
• Aerospace and defense electronics

Procurement Notes

Verify the specific datasheet revision and package dimensions against the design requirements before procurement. Confirm that the screw mount interface matches the heatsink or chassis mounting provisions in the final assembly. Ensure thermal management solutions are adequate for the specified maximum junction temperature of +200°C during operation.

Selection Notes

Select this component when a 60 W output power capability is required within the HF/VHF/UHF spectrum up to 175 MHz. The 65 V breakdown voltage suits standard 28 V supply rails common in RF amplifier designs. Consider the screw mount form factor if surface-mount options are unsuitable for the mechanical constraints of the application.

Part Context

This part belongs to MACOM's portfolio of RF power MOSFET transistors engineered for demanding radio frequency environments. These devices are characterized for use in systems requiring high linearity and power density across wide bandwidths.

Replacement Considerations

Consult official MACOM documentation for verified cross-reference parts. No public substitute part numbers are confirmed in the provided data.