E3M0160120D

Description：SIC, MOSFET, 160M, 1200V, TO-247
Series：E Series
Mfr：Wolfspeed, Inc.
Package：Tray

SKU:9fb649d8112d Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 160M, 1200V, TO-247
Series：E Series
Mfr：Wolfspeed, Inc.
Package：Tray
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：17.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id：3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 15 V
Vgs (Max)：-8V, +19V
Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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E3M0160120D

Overview

The Wolfspeed E3M0160120D is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET from the E-Series, designed for automotive applications. It features a 1200 V drain-source breakdown voltage and a maximum on-state resistance of 280 mΩ at 175°C. The device supports a continuous drain current of 17.9 A at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-247-3L housing, it utilizes 3rd generation SiC technology to achieve high-speed switching with low capacitances.

Feature Summary

Automotive qualified under AEC-Q101 standards with PPAP capability
Utilizes 3rd generation Silicon Carbide technology for enhanced performance
Features fast intrinsic diode characteristics with low reverse recovery charge
Halogen-free and RoHS compliant construction

Applications

EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific lot matches the required AEC-Q101 qualification status. Ensure the TO-247-3L package dimensions align with the recommended solder pad layout provided in the datasheet. Check for any updated revision history regarding electrical parameter tolerances before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring robust high-voltage handling in compact automotive environments. The TO-247-3L package facilitates efficient thermal management via direct case mounting. Evaluate the trade-off between the 280 mΩ maximum on-resistance at elevated temperatures and system efficiency requirements. Consider the internal gate resistance when designing driver circuits to optimize switching speed and minimize electromagnetic interference.

Part Context

This device belongs to Wolfspeed's E-Series discrete silicon carbide power MOSFETs. The series targets onboard automotive applications including battery electric vehicles, plug-in hybrid EVs, and fuel cell EVs. It complements other Wolfspeed SiC components by offering a balance of blocking voltage and conduction loss suitable for high-frequency power conversion topologies.