EC4H07C-TL

$0.12

Description：BIP NPN 30MA 4V FT=10G
Series：*

SKU:2e4e2dfa97a9 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

EC4H07C-TL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 30MA 4V FT=10G. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for EC4H07C-TL

Description：BIP NPN 30MA 4V FT=10G
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for EC4H07C-TL

EC4H07C-TL

Single Bipolar Transistors Overview

The EC4H07C-TL is an NPN epitaxial planar silicon transistor from the RF bipolar power series, manufactured by onsemi. Designed for UHF to X-band applications, it operates with a maximum collector-emitter voltage of 3.5 V and a continuous collector current of 10 mA. The device features a high cut-off frequency (fT) of 24 GHz typical at VCE=3V and provides a gain (|S21e|^2) of 17 dB typical at 2 GHz. It dissipates 50 mW of power and functions within a temperature range of -25°C to +150°C. Packaged in ECSP format for surface mount installation, it supports low-voltage operation.

Single Bipolar Transistors Feature Summary

Optimized for low-noise amplifier and oscillator applications across UHF to X-band frequencies
High cut-off frequency enabling efficient performance at 2 GHz
Capable of high gain output under low operating voltage conditions
Compliant with halogen-free standards

Single Bipolar Transistors Applications

UHF low-noise amplification
X-band oscillator circuits
Low-voltage RF signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TL' against official datasheets to confirm tape-and-reel packaging and halogen-free status. Ensure the part number matches the exact electrical ratings for 3.5 V VCEO and 24 GHz fT. Cross-reference the manufacturer's latest documentation to confirm availability and any potential design changes or obsolescence notices prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-frequency operation up to 2 GHz with minimal supply voltage constraints. The 3.5 V collector-emitter rating suits low-power RF stages. Verify that the ECSP package fits the board layout and that the thermal dissipation requirements align with the 50 mW limit. Confirm compatibility with UHF to X-band circuit topologies.

Single Bipolar Transistors Part Context

This transistor belongs to onsemi's RF bipolar power series, specifically engineered for high-frequency semiconductor applications. It utilizes epitaxial planar silicon technology to achieve high cut-off frequencies suitable for modern wireless communication systems. The product line focuses on delivering high gain and low noise characteristics in compact surface-mount packages.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult official distributor databases for cross-reference lists based on matching electrical parameters such as 24 GHz fT and 3.5 V VCEO.