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The ECH8659-TL-H is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes trench technology to achieve low on-resistance and minimized gate charge. The device features an 8-pin ECH surface-mount package with dimensions of 2.9mm length, 2.3mm width, and 0.9mm height. Key electrical parameters include a maximum drain-source voltage of 30V, a continuous drain current of 7A, and a typical on-resistance of 24mΩ. The unit supports a maximum power dissipation of 1.5W and operates at temperatures up to +150°C.
Verify the specific suffix (TL-H) against official datasheets to confirm pinout and tape-and-reel specifications. Ensure thermal management aligns with the 1.5W dissipation rating in the ECH package. Cross-reference the 30V/7A ratings with system requirements to prevent overstress conditions during operation.
Select this component when a dual N-channel topology is required in a space-constrained design. The ECH package offers a balance between thermal performance and footprint size. Consider the 24mΩ on-resistance for efficiency-critical applications where conduction losses must be minimized relative to the 7A current capability.
This part belongs to onsemi's ECH series of Power MOSFETs, which are designed for intelligent power and sensing technologies. The series targets industrial and automotive applications requiring robust reliability and scalable performance. The ECH8659 specifically addresses needs for efficient switching in dense power architectures.
ECH8659-M-TL-H: Verify if the 'M' suffix indicates a different binning or slight parameter variation compared to the standard TL-H version. Check datasheet compatibility for pinout and electrical limits before substitution.