ECH8667-TL-H

Overview

The onsemi ECH8667-TL-H is a P-channel enhancement mode MOSFET designed for surface-mount applications. It features an 8-pin ECH package with dimensions of 2.9mm length, 2.3mm width, and 0.9mm height. The device supports a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 5.5 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 82 mΩ and a typical gate charge of 13 nC at 10 V. It operates within a junction temperature range up to +150 °C and has a maximum power dissipation of 1.5 W.

Feature Summary

• Dual-chip configuration integrated into a compact 8-lead ECH footprint.

Applications

• Low-voltage power switching circuits requiring P-channel control.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and thermal characteristics. Ensure that the selected variant matches the required voltage and current ratings for the target application environment. Cross-reference datasheet revisions to validate parameter consistency before finalizing component selection.

Selection Notes

Select this component when a single P-channel MOSFET solution is needed in an 8-lead ECH package. Evaluate the 82 mΩ on-resistance against thermal management requirements for the expected load current. Confirm that the 30 V breakdown voltage provides sufficient margin for the system's supply rails.

Part Context

This part belongs to the ECH series of surface-mount MOSFETs from onsemi. The ECH package offers a small form factor suitable for space-constrained designs. The device utilizes silicon technology and is compliant with RoHS standards, supporting modern manufacturing processes.

Replacement Considerations

Direct substitutes must match the 30 V rating, 5.5 A current capacity, and 8-ECH package outline. Verify pin compatibility and thermal resistance values before swapping components in existing layouts.