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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 10A SOT28
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：11.6mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.5W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：SOT-28FL/ECH8
- Grade：-
- Qualification：-
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Overview
The ECH8697R-TL-W is a dual N-channel power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ECH-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 24 V and supports a continuous drain current (Id) of 10 A. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±12.5 V, a typical gate charge (Qg) of 6 nC, and a drain-source on-resistance (Rds(on)) of 11.6 mΩ. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1.6 W.
Feature Summary
- Dual N-channel configuration for integrated switching applications
- Low gate charge capability for efficient drive requirements
- Enhanced thermal performance via the ECH-8 package design
Applications
- DC-DC converter circuits
- Power management modules
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm packaging type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and lead times directly with the manufacturer or certified suppliers prior to procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with 24 V rating and low gate charge is required. Compare Rds(on) and Qg values against alternative devices to ensure compatibility with existing gate driver capabilities and thermal constraints in the target application design.
Part Context
This part belongs to the ECH series of power MOSFETs from onsemi. The series focuses on high-density packaging solutions suitable for modern compact electronic designs. The ECH-8 package provides a balance between electrical performance and board space efficiency.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 24 V Vds, 10 A Id, and ECH-8 package dimensions. Verify that any alternative maintains equivalent Rds(on) and Qg specifications.
