FET, MOSFET Arrays EFC4618R-TR product image

EFC4618R-TR

  • Description:MOSFET 2N-CH EFCP1818
  • Series:-

SKU:a2ab15c44524 Category: Brand:

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EFC4618R-TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH EFCP1818. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EFC4618R-TR

  • Description:MOSFET 2N-CH EFCP1818
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.6W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-XFBGA, FCBGA
  • Supplier Device Package:EFCP1818-4CC-037
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for EFC4618R-TR

EFC4618R-TR

FET, MOSFET Arrays Overview

The EFC4618R is a dual N-channel silicon MOSFET in the EFCP package, designed for general-purpose switching. It features a common-drain configuration with two independent channels sharing source terminals (pins 1 and 4). The device supports a maximum source-to-source voltage of 24 V and a continuous DC source current of 6 A. Key electrical parameters include a static on-state resistance (RSS(on)) ranging from 13.5 mΩ to 35 mΩ depending on gate drive, and a total gate charge of 25.4 nC. It operates within a channel temperature range up to 150 °C.

FET, MOSFET Arrays Feature Summary

  • Optimized for low-voltage operation with effective 2.5V gate drive capability
  • Common-drain architecture suitable for battery charging and discharging applications
  • Dual-channel design providing integrated switching functionality

FET, MOSFET Arrays Applications

  • Lithium-ion battery charging switches
  • Lithium-ion battery discharging switches
  • General-purpose electronic equipment switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductor while the model prefix suggests onsemi. Confirm the specific ordering suffix 'TR' indicates the tape and reel packaging format containing 5,000 pieces per reel. Ensure the component meets standard application requirements rather than specialized high-reliability sectors.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage circuits requiring a 24 V breakdown rating and efficient switching at 2.5 V logic levels. The common-drain topology is distinct; verify circuit compatibility against standard common-source designs. Consider the thermal dissipation limits when mounting on substrates other than the specified ceramic reference.

FET, MOSFET Arrays Part Context

Originally manufactured by SANYO Semiconductor, this part belongs to the family of general-purpose N-channel MOSFETs. The technology focuses on minimizing on-state resistance to improve efficiency in portable electronics. The EFCP package provides a compact footprint for surface-mount assembly.

FET, MOSFET Arrays Replacement Considerations

The EFC4601R is a documented variant within the same series offering similar specifications. Verify pinout compatibility and exact on-resistance values before substitution. Cross-reference with other dual-channel common-drain MOSFETs if sourcing from alternative manufacturers.

FET, MOSFET Arrays FAQ

What is the maximum continuous source current?

The maximum continuous DC source current is rated at 6 A.

How does the gate drive voltage affect performance?

The device is optimized for 2.5V drive, though on-state resistance varies significantly between 2.5V and 4.5V gate-source voltages.

What is the package type?

The component utilizes the EFCP package, which is a small surface-mount configuration.

EFC4618R-TREFC4618R-TR

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