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Product Detailed Parameters
- Description：MOSFET 2N-CH EFCP1616
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.6W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XFBGA, FCBGA
- Supplier Device Package：EFCP1616-4CE-022
- Grade：-
- Qualification：-
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Overview
The EFC4621R-TR is an N-channel depletion-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 24 V and a continuous drain current rating of 6 A. The device utilizes the EFCP surface-mount package with four pins. Key electrical characteristics include a maximum on-resistance of 31 mΩ, a gate threshold voltage range between 0.5 V and 1.3 V, and a maximum power dissipation of 1.6 W. It supports a maximum operating temperature of +150 °C and has a typical gate charge of 8.8 nC at 4.5 V.
Feature Summary
- N-channel depletion mode operation for normally-on applications
- Low on-resistance for efficient power handling
- High thermal stability with elevated maximum junction temperature
Applications
- Power management circuits requiring normally-on logic
- Load switching applications in automotive systems
- Industrial control interfaces
Procurement Notes
Verify the specific ordering suffix to confirm tape-and-reel packaging quantities. Ensure compliance with RoHS directives and material composition requirements before integration. Confirm that the EFCP package dimensions match the target PCB footprint design constraints.
Selection Notes
Select this component when a normally-on N-channel configuration is required within a 24 V system. The 6 A current capability and low Rds(on) make it suitable for moderate power switching tasks. Verify that the depletion mode behavior aligns with the circuit's default state requirements.
Part Context
This part belongs to onsemi's discrete MOSFET portfolio designed for surface-mount assembly. The EFCP package provides a compact form factor suitable for high-density board layouts. It serves as a specialized solution for applications needing reliable depletion-mode performance in automotive or industrial environments.
Replacement Considerations
Cross-reference with other N-channel depletion MOSFETs offering similar 24 V ratings and 6 A current capabilities. Verify pinout compatibility and thermal resistance values to ensure direct substitution without redesigning the heat sink or layout.
