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The EFC4626R-TR is a dual N-channel power MOSFET manufactured by onsemi in the EFCP package. It features a source-to-source breakdown voltage of 24 V and a continuous source current rating of 5 A. The device supports 2.5 V drive levels with an on-state resistance (RSS(on)) ranging from 29.2 mΩ to 72.4 mΩ depending on gate voltage. Key electrical parameters include a gate threshold voltage of 0.5 V to 1.3 V, total gate charge of 7.5 nC, and forward transconductance of 7 S. It operates within a junction temperature range up to 150 °C and includes protection diodes.
Verify the specific ordering suffix to confirm shipping quantities and packaging details. Confirm RoHS compliance status as indicated in the datasheet. Ensure the component matches the required EFCP package dimensions for PCB footprint compatibility. Validate that the manufacturer documentation aligns with the requested part number before finalizing procurement orders.
Select this component when a dual N-channel MOSFET with 24 V rating and 5 A current capacity is required. Consider the 2.5 V drive capability for low-voltage logic interfaces. Evaluate the thermal resistance of 84 °C/W against the expected power dissipation of 1.4 W. Verify that the EFCP package fits the available board space constraints.
This component belongs to the EFC4626R series of dual N-channel power MOSFETs. It is designed specifically for battery management systems requiring compact packaging. The EFCP package provides a small form factor suitable for portable electronics. The device integrates two independent channels in a single surface-mount package.
Check for direct substitutes within the same EFCP package family. Verify pinout compatibility for Source and Gate terminals. Ensure replacement parts meet the 24 V breakdown and 5 A current requirements. Confirm similar on-state resistance values to maintain circuit efficiency.