EFC8811R-TF

FET, MOSFET Arrays Overview

The EFC8811R-TF is an N-channel depletion-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current of 27 A. The device utilizes a CSP package with six pins for surface mount installation. Key electrical parameters include a maximum drain-source resistance of 6.3 mΩ, a gate threshold voltage range of 0.5 V to 1.3 V, and a maximum power dissipation of 2.5 W. It contains two chip elements in a common-drain configuration, with a typical gate charge of 100 nC at 4.5 V. The component operates up to +150 °C and has physical dimensions of 3.4 mm length, 1.77 mm width, and 0.22 mm height.

FET, MOSFET Arrays Feature Summary

• Depletion mode operation allows the device to conduct current at zero gate-source voltage.
• Dual-chip architecture within a compact CSP package provides high current density.
• Low on-resistance minimizes conduction losses in power switching applications.

FET, MOSFET Arrays Applications

• Power management integrated circuits
• DC-DC converter synchronous rectification
• Load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TF against official onsemi documentation to confirm tape and reel specifications. Ensure compatibility with standard surface mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest product compliance reports before integration into regulated hardware designs.

FET, MOSFET Arrays Selection Notes

Select this component when a normally-on behavior is required for power sequencing or load control. The 12 V rating suits low-voltage systems. Evaluate thermal performance based on the 2.5 W dissipation limit and CSP thermal characteristics. Compare gate charge requirements against available driver capabilities to ensure adequate switching speed.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's EFC series of depletion-mode MOSFETs designed for embedded power applications. These devices are distinct from enhancement-mode transistors due to their inherent conductivity at Vgs=0. The series targets compact power solutions where space constraints necessitate small form factors like CSP.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify that any alternative maintains the depletion mode characteristic, as standard N-channel MOSFETs are typically enhancement mode. Match voltage, current, and package dimensions if physical replacement is necessary.