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Product Detailed Parameters
- Description：MOSFET N-CH DUAL 6CSP
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The EFC8822R-TF is an N-channel depletion-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current rating of 27 A. The device utilizes a CSP package with six pins for surface mount installation. Key electrical parameters include a maximum drain-source resistance of 6.3 mΩ, a gate threshold voltage range from 0.5 V to 1.3 V, and a maximum power dissipation of 2.5 W. The component operates at temperatures up to +150 °C and contains two transistor elements in a common-drain configuration.
Feature Summary
- N-channel depletion mode operation
- Low on-state resistance for efficiency
- Compact CSP surface-mount packaging
Applications
- Power management circuits
- Load switching applications
- Automotive electronics systems
Procurement Notes
Verify the specific ordering suffix TF against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard surface-mount assembly processes. Cross-reference the part number with updated nomenclature lists due to potential corporate integration changes affecting naming conventions.
Selection Notes
Select this component for designs requiring normally-on behavior within a 12 V system. Evaluate thermal performance against the 2.5 W dissipation limit under expected load conditions. Confirm that the depletion mode characteristic aligns with the circuit's default state requirements before finalizing the design.
Part Context
This component belongs to the family of low-voltage power MOSFETs designed for compact power solutions. The depletion mode variant provides distinct functionality compared to enhancement-mode devices, allowing current flow at zero gate bias. The CSP package supports high-density PCB layouts typical in modern portable and automotive electronic assemblies.
Replacement Considerations
Consult official substitution guides for equivalent N-channel depletion MOSFETs with matching 12 V ratings and comparable current capabilities. Verify pinout compatibility and thermal characteristics when considering alternative suppliers or updated part numbers.
