ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.25A EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 25V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
Download product information
Overview
The EM6K31T2R is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a SOT-563 (EMT6) surface-mount package with six terminals. The device supports a drain-source voltage of 60 V and a continuous drain current of 0.25 A. Key electrical parameters include an on-resistance of 3 Ω at a 2.5 V gate drive, reducing to 1.7 Ω at 10 V. Power dissipation is rated at 0.15 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Low on-resistance achieved through micro-processing technology for efficient switching
- Optimized for 2.5 V drive voltage compatibility in compact designs
- Dual N-channel configuration within a small surface-mount footprint
Applications
- General-purpose signal switching in consumer electronics
- Battery-powered portable devices requiring low-voltage control
- Compact circuit boards where space-saving dual transistor solutions are needed
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm availability and authenticity before placing orders.
Selection Notes
Select this component when a dual N-channel MOSFET with a 60 V rating and low on-resistance at 2.5 V drive is required. Consider the 0.15 W power dissipation limit and ensure adequate thermal management. Compare Rds(on) values at different gate voltages to match the system's logic level constraints.
Part Context
This part belongs to ROHM's series of composite MOSFETs utilizing micro-processing techniques. These devices are standard-grade components intended for general electronic equipment. They are not recommended for automotive applications. The product line focuses on providing compact, high-performance solutions for various market demands.
Replacement Considerations
Check for direct substitutes within the same ROHM series that offer similar voltage ratings and package dimensions. Verify that any replacement maintains compatible Rds(on) characteristics at the intended drive voltage. Ensure the alternative part supports the required operating temperature range and power dissipation limits.
