FET, MOSFET Arrays EM6K7T2R product image

EM6K7T2R

$0.56
  • Description:MOSFET 2N-CH 20V 0.2A EMT6
  • Series:-

SKU:5f3ec1429386 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

EM6K7T2R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 20V 0.2A EMT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EM6K7T2R

  • Description:MOSFET 2N-CH 20V 0.2A EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:200mA
  • Rds On (Max) @ Id, Vgs:1.2Ohm @ 200mA, 2.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 10V
  • Power - Max:150mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for EM6K7T2R

EM6K7T2R

FET, MOSFET Arrays Overview

The ROHM Semiconductor EM6K7T2R is a dual N-channel MOSFET housed in an SOT-563-6 surface-mount package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 200 mA. The device exhibits a typical on-resistance of 800 mOhms at Vgs = 1.2 V, with a gate-source threshold voltage of 1 V. Operating within a temperature range of -55°C to +150°C, it dissipates up to 150 mW. Switching characteristics include rise and fall times of 10 ns, and a minimum forward transconductance of 200 mS.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for compact circuit integration
  • Low on-resistance optimized for low-voltage drive applications
  • Enhancement mode operation suitable for digital switching

FET, MOSFET Arrays Applications

  • Low-voltage signal switching circuits
  • Battery-powered portable devices
  • General-purpose logic level translation

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix T2R confirms reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to implementation. Ensure the SOT-563-6 footprint matches the target PCB layout design requirements accurately.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in minimal space. The 20 V rating suits low-voltage systems. Evaluate thermal management needs given the 150 mW power dissipation limit in the small outline package. Verify compatibility with 1.2 V drive signals for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to the EM6K7 series of dual N-channel MOSFETs from ROHM. These devices utilize micro-processing technology to achieve low on-resistance. They are designed for general-purpose applications but are explicitly noted as not recommended for automotive equipment use.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other ROHM dual N-channel MOSFETs in the SOT-563 package if pinout compatibility is required. Verify electrical parameters match exactly before substitution.

EM6K7T2REM6K7T2R
$0.56
Buy Now