EMH2409-TL-H

FET, MOSFET Arrays Overview

The EMH2409-TL-H is a dual N-channel enhancement mode MOSFET array manufactured by onsemi. It utilizes silicon technology and is housed in an 8-EMH surface-mount package. The device features a drain-source voltage rating of 30 V and a continuous drain current of 4 A at 25°C. Key electrical characteristics include a maximum on-resistance of 59 mΩ at 2 A and 10 V, with a typical gate charge of 4.4 nC at 10 V. Input capacitance is specified at 240 pF at 10 V. The component supports a maximum power dissipation of 1.2 W and operates within a junction temperature range up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for compact circuit integration
• Logic-level gate drive capability
• Surface-mount construction for automated assembly

FET, MOSFET Arrays Applications

• Low-voltage DC-DC converter circuits
• Load switching applications
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation before procurement. Confirm RoHS and REACH compliance status through the manufacturer's latest environmental declarations. Check for obsolescence notices or lifecycle changes directly from the supplier. Ensure the component matches the required 8-EMH package dimensions for PCB footprint compatibility. Validate all electrical parameters against the most recent datasheet revision.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a dual N-channel MOSFET array in a low-voltage environment. The 30 V rating and 4 A current capacity suit moderate power switching tasks. Evaluate the 59 mΩ on-resistance for thermal performance requirements. Consider the 8-EMH package size for space-constrained layouts. Compare gate charge specifications against driver capabilities to ensure adequate switching speed.

FET, MOSFET Arrays Part Context

This part belongs to the EMH24xx series of dual MOSFET arrays from onsemi. It shares the 8-EMH surface-mount package form factor with other variants in the family. The series targets general-purpose low-voltage switching applications. It complements single-channel options by providing two devices in one footprint.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible replacements within the same package type. Verify that substitute parts meet or exceed the 30 V voltage rating and 4 A current capacity. Ensure the replacement maintains similar on-resistance and gate charge characteristics.