FET, MOSFET Arrays EMH2411R-TL-H product image

EMH2411R-TL-H

$0.21
  • Description:MOSFET 2N-CH 30V 5A 8EMH
  • Series:-

SKU:158cd77e13da Category: Brand:

  
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EMH2411R-TL-H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 5A 8EMH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EMH2411R-TL-H

  • Description:MOSFET 2N-CH 30V 5A 8EMH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5A
  • Rds On (Max) @ Id, Vgs:36.5mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.4W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-EMH
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for EMH2411R-TL-H

EMH2411R-TL-H

FET, MOSFET Arrays Overview

The EMH2411R-TL-H is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 24 V and a continuous drain current of 6 A at 25 °C. The device utilizes the 8-EMH surface-mount package, measuring 2 mm in length, 1.7 mm in width, and 0.75 mm in height. Key electrical parameters include a maximum drain-source on-resistance of 39 mΩ and a typical gate charge of 6.3 nC at 4.5 V. It supports a maximum power dissipation of 1.4 W and operates up to a junction temperature of +150 °C.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a compact 8-pin surface-mount footprint
  • Logic-level gate drive capability for efficient switching applications
  • High thermal performance with a maximum operating junction temperature of +150 °C

FET, MOSFET Arrays Applications

  • Low-voltage DC-DC converter circuits
  • Power management modules requiring small form factors
  • Battery protection and load switch designs

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Request official datasheets and RoHS compliance documentation prior to integration. Confirm that the specific ordering suffix matches the required tape-and-reel packaging specifications for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required in an 8-EMH package. Ensure the 24 V rating aligns with system voltage requirements. Compare the 39 mΩ on-resistance against thermal constraints to determine if adequate heat sinking is necessary for the intended duty cycle and ambient conditions.

FET, MOSFET Arrays Part Context

This part belongs to the EMH series of surface-mount MOSFETs from onsemi. It shares the physical 8-EMH package dimensions with related variants such as the EMH2412-TL-H and EMH2407-TL-H. These devices are designed for high-density PCB layouts where space efficiency and thermal reliability are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

The EMH2412-TL-H is a documented alternative within the same series offering similar 24 V and 6 A ratings in the identical 8-EMH package. Verify pinout compatibility and specific Rds(on) tolerances before substitution.

EMH2411R-TL-HEMH2411R-TL-H
$0.21
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