EMH2417R-TL-H

FET, MOSFET Arrays Overview

The EMH2417R-TL-H is a dual N-channel power MOSFET array in an EMH8 (SOT-383FL) surface-mount package. It features a 12V drain-source voltage rating and supports an 11A continuous drain current. The device exhibits a low on-resistance of 10mΩ at VGS=4.5V and ID=5A, with a maximum gate threshold voltage of 1.3V. Key electrical parameters include a total gate charge of 16nC, a forward transconductance of 13S, and a maximum power dissipation of 1.3W. It operates within a junction temperature range up to 150°C.

FET, MOSFET Arrays Feature Summary

• Common-drain configuration with integrated gate protection resistors for enhanced stability.
• Optimized for 2.5V logic-level drive applications.
• Designed specifically as a switching component for lithium-ion battery charging and discharging circuits.

FET, MOSFET Arrays Applications

• Lithium-ion battery charging switch circuits
• Battery discharging switch circuits
• Low-voltage DC-DC converter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-H to confirm the reel quantity of 3,000 pieces per unit. Ensure compliance requirements match project needs, as this variant is designated as lead-free and halogen-free. Cross-reference the manufacturer part number ENA2313 for accurate datasheet documentation during procurement validation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual common-drain N-channel MOSFET is required for low-side switching in 12V systems. The 10mΩ on-resistance makes it suitable for high-current applications requiring minimal conduction loss. Verify that the PCB footprint accommodates the EMH8 package dimensions and thermal requirements for the specified 1.3W power dissipation.

FET, MOSFET Arrays Part Context

This device belongs to the EMH2417 series of dual N-channel MOSFETs manufactured by onsemi. It utilizes the proprietary EMH8 package, which provides a compact form factor suitable for space-constrained designs. The product line focuses on delivering high efficiency in portable electronics and battery-powered devices through optimized gate drive characteristics.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must maintain the 12V/11A rating and dual common-drain topology. Verify pinout compatibility with the EMH8 package. Check if alternative suppliers offer equivalent RDS(on) values and gate charge specifications to ensure circuit performance remains unchanged.

FET, MOSFET Arrays FAQ

What is the typical turn-on delay time for the EMH2417R?

The typical turn-on delay time (td(on)) is 470 ns under standard test conditions.

Does the EMH2417R include internal protection components?

Yes, the device includes built-in gate protection resistors to assist in controlling switching speed and reducing electromagnetic interference.

What is the maximum forward diode voltage of the intrinsic body diode?

The maximum forward diode voltage (VSD) is 1.2V when the source current is 11A and VGS is 0V.