EPC2022

$8.59

Description：GANFET N-CH 100V 90A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:11a94f7b750c Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 90A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2022

Overview

The EPC2022 is an enhancement mode Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by Efficient Power Conversion. It features a drain-source voltage rating of 100 V and a maximum on-resistance of 3.2 mΩ. The device supports a pulsed drain current of 390 A and operates within a junction temperature range of -40°C to 150°C. Key electrical specifications include a gate threshold voltage between 0.8 V and 2.5 V, a maximum gate-source voltage of +6 V/-4 V, and a maximum input capacitance of 1500 pF at 50 V. The component utilizes a surface-mount package with dimensions of 6.1 x 2.3 mm.

Feature Summary

Enhancement mode operation with low gate threshold voltage for efficient driver compatibility
Zero reverse recovery charge enabling high-frequency switching with minimal losses
Low on-resistance contributing to reduced conduction losses and higher power density

Applications

High-efficiency synchronous rectification in DC-DC converters
Motor drive inverters requiring fast switching speeds
Industrial automation power supplies
Surge protection circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging type, such as tape and reel quantities, as these details are critical for automated assembly processes. Ensure the component meets RoHS 6/6 and halogen-free requirements if mandated by your manufacturing standards. Cross-reference the datasheet revision date to confirm technical specifications align with your design timeline. Confirm thermal management capabilities match your system's heat dissipation strategy.

Selection Notes

Select this component for applications demanding high power density and efficiency due to its low RDS(on) and zero reverse recovery characteristics. Consider the 100 V breakdown voltage when designing systems operating within this voltage headroom. Evaluate the gate drive requirements against the specified threshold voltage range to ensure reliable turn-on and turn-off behavior. Assess the thermal performance under expected load conditions to maintain junction temperatures within the specified operational limits.

Part Context

The EPC2022 belongs to the EPC series of enhancement mode GaN power transistors designed for high-performance power conversion. These devices leverage gallium nitride material properties to achieve superior switching speeds compared to traditional silicon MOSFETs. The product line targets modern electronic systems where size, weight, and energy efficiency are primary design constraints.