EPC2102

FET, MOSFET Arrays Overview

The EPC2102 is an enhancement-mode GaN power transistor half-bridge IC supplied in passivated die form with solder bumps. It features a 60 V drain-to-source voltage rating and a maximum on-resistance of 4.9 mΩ at 5 V gate drive and 20 A drain current. The device supports a continuous drain current of 30 A at 25°C ambient temperature with a thermal resistance junction-to-case of 0.3 °C/W. Key dynamic characteristics include a typical total gate charge of 11 nC, input capacitance of 1020 pF, and zero reverse recovery charge.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge configuration containing two matched eGaN FETs (Q1 and Q2) for high-frequency switching applications.
• Lateral device structure providing exceptionally low gate charge and zero reverse recovery charge for improved efficiency.
• Low thermal resistance junction-to-case enabling effective heat dissipation in compact designs.
• Passivated die form factor with solder bumps designed for direct integration into custom substrates or modules.

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• High density power supply designs
• Ultra-high efficiency power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and reel configuration details directly with Efficient Power Conversion Corporation or authorized distributors. Confirm moisture sensitivity level classification and tape-and-reel dimensions prior to assembly planning. Ensure compatibility with recommended stencil thickness and solder paste specifications for proper bump attachment.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a pre-matched half-bridge topology with low on-state losses. Evaluate the 60 V breakdown voltage against peak transient voltages in the target circuit. Consider the 0.3 °C/W thermal resistance for heatsinking requirements and verify that the PCB land pattern matches the recommended dimensions for optimal thermal and electrical performance.

FET, MOSFET Arrays Part Context

The EPC2102 belongs to the eGaN FET family from Efficient Power Conversion Corporation. It utilizes Gallium Nitride technology grown on silicon wafers using standard CMOS equipment. This technology leverages high electron mobility to achieve low on-resistance and fast switching speeds compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the datasheet. When evaluating alternatives, ensure the replacement maintains the half-bridge configuration, similar 60 V rating, and comparable thermal resistance. Verify that the new component's gate charge and capacitance values align with the existing driver capabilities.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the EPC2102?

The maximum pulsed drain current is 220 A, measured at 25°C with a pulse duration of 300 µs.

How is the EPC2102 packaged?

The EPC2102 is supplied only in passivated die form with solder bumps, intended for surface mount assembly onto a substrate.

What is the recommended gate drive voltage range?

The gate-to-source voltage rating is +6 V for ON and -4 V for OFF. EPC recommends 0 V for the OFF state.