EPC2102ENGRT

FET, MOSFET Arrays Overview

The EPC2102ENGRT is an enhancement-mode Gallium Nitride (GaN) power transistor half-bridge die supplied in a passivated form with solder bumps. It features a Drain-to-Source Voltage (VDS) of 60 V and a typical Drain-Source On Resistance (RDS(on)) of 4.9 mΩ at VGS = 5 V and ID = 20 A. The device supports a continuous drain current (ID) of 30 A at TA = 25°C and can handle pulsed currents up to 220 A for 300 µs. Operating temperatures range from -40°C to 150°C, with thermal resistances of 0.3°C/W junction-to-case and 2.2°C/W junction-to-board.

FET, MOSFET Arrays Feature Summary

• Lateral GaN structure providing zero reverse recovery charge (QRR)
• Ultra-low gate charge enabling high-frequency operation
• Passivated die form with solder bumps for surface mount assembly

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• High density power supply designs
• Applications requiring ultra-high efficiency and low on-time

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ENGRT corresponds to the tape and reel configuration described in the datasheet. Confirm that the procurement includes the correct moisture sensitivity level classification and handling requirements for bare die components. Ensure compatibility with SAC305 Type 4 solder and recommended stencil thickness during assembly preparation.

FET, MOSFET Arrays Selection Notes

Select this component for designs prioritizing switching speed and footprint reduction over discrete packaging convenience. Evaluate thermal management strategies based on the specified junction-to-ambient resistance of 42°C/W on a single-layer FR4 board. Consider the 60 V voltage rating and 4.9 mΩ on-resistance for conduction loss calculations in medium-voltage applications.

FET, MOSFET Arrays Part Context

The EPC2102 is part of the eGaN® FET family from Efficient Power Conversion Corporation. It represents a shift towards bare die integration for custom power stages. The ENGRT suffix indicates the specific reel packaging format for automated placement systems.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are listed in the provided documentation. When considering alternatives, verify matching voltage ratings, on-resistance values, and package compatibility. Cross-compatibility requires careful evaluation of thermal characteristics and gate drive requirements.