EPC2104ENGRT

FET, MOSFET Arrays Overview

The EPC2104 is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It features a maximum drain-to-source voltage of 100 V and a continuous drain current of 30 A at 25°C. The device exhibits a typical on-resistance of 6.8 mΩ at VGS = 5 V and ID = 20 A, with a total gate charge of 8.7 nC. Operating within a junction temperature range of -40°C to 150°C, it utilizes a passivated die form with solder bumps for surface-mount assembly.

FET, MOSFET Arrays Feature Summary

• Lateral GaN structure providing zero reverse recovery charge
• Half-bridge configuration integrating two N-channel devices
• Low thermal resistance enabling high-density footprints

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and handling specifications. Confirm that the received components match the required die orientation and solder bump integrity standards before integration into the final assembly process.

FET, MOSFET Arrays Selection Notes

Evaluate the thermal management requirements based on the specified junction-to-board and junction-to-case thermal resistances. Ensure the gate driver circuitry supports the recommended 5 V logic levels and accounts for the low gate charge characteristics to optimize switching performance and minimize losses in the target application design.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN FET family from Efficient Power Conversion Corporation. It represents a class of enhancement-mode transistors designed to replace traditional silicon MOSFETs in applications demanding higher efficiency and switching frequencies due to superior electron mobility and lack of minority carrier storage effects.

FET, MOSFET Arrays Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, verify compatibility with existing gate drive voltages and ensure the replacement device maintains similar thermal resistance values and package dimensions for direct board-level interchangeability.