EPC2105ENGRT

FET, MOSFET Arrays Overview

The EPC2105 is an enhancement-mode Gallium Nitride (GaN) power transistor half-bridge die. It integrates two lateral GaN FETs: Q1 with a typical on-resistance of 14.5 mΩ and continuous drain current of 10 A, and Q2 with 3.6 mΩ resistance and 40 A capability. Both devices feature an 80 V drain-to-source voltage rating and operate within a junction temperature range of -40°C to 150°C. The component utilizes solder bumps for mounting and is supplied in passivated die form.

FET, MOSFET Arrays Feature Summary

• Lateral device structure providing low gate charge and zero reverse recovery charge
• High electron mobility enabling ultra-high efficiency and high-frequency operation
• Negative temperature coefficient allowing stable parallel operation

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Power conversion systems requiring high density footprints
• Applications where on-state losses dominate performance requirements

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel specifications. Confirm moisture sensitivity level classification prior to assembly. Ensure handling procedures account for the passivated die form factor and solder bump configuration during placement.

FET, MOSFET Arrays Selection Notes

Select based on required current handling capabilities between the integrated high-side and low-side transistors. Evaluate thermal resistance parameters relative to the intended PCB copper pad area. Consider the 80 V breakdown voltage margin for the target application circuit.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN® FET family from Efficient Power Conversion Corporation. It represents a discrete integration of complementary GaN transistors designed for monolithic half-bridge configurations. The technology leverages silicon carbide or similar substrate processes for enhanced switching performance.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented. Replacement requires matching the half-bridge topology, 80 V rating, and die-level packaging constraints. Verify compatibility with existing gate driver signals and land patterns.