EPC2106

FET, MOSFET Arrays Overview

The EPC2106 is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It features a 100 V drain-to-source voltage rating and a maximum on-resistance of 70 mΩ at VGS = 5 V and ID = 2 A. The device supports a continuous drain current of 1.7 A at 25°C and operates within a junction temperature range of -40°C to 150°C. Key dynamic characteristics include a total gate charge of 900 pC maximum and zero reverse recovery charge. The component is supplied in passivated die form with solder bumps, measuring 1.35 x 1.35 mm.

FET, MOSFET Arrays Feature Summary

• Half-bridge configuration integrating two N-channel GaN FETs for simplified circuit design
• Zero reverse recovery charge enabling high-frequency switching without body diode losses
• Ultra-low gate charge reducing driver requirements and switching energy loss
• Lateral device structure providing robust performance under high thermal stress

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• Class-D audio amplifiers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and reel specifications. Confirm that the received components match the laser markings and die orientation dot described in the datasheet. Ensure assembly processes utilize SAC305 Type 4 solder and appropriate stencil thicknesses as recommended by the manufacturer.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a compact half-bridge solution with minimal footprint. Consider the 1.7 A continuous current limit and 70 mΩ on-resistance when calculating conduction losses. Evaluate the thermal resistance parameters relative to the intended PCB copper pad area to ensure adequate heat dissipation for the target operating conditions.

FET, MOSFET Arrays Part Context

The EPC2106 belongs to the eGaN® FET family from Efficient Power Conversion Corporation. It utilizes lateral GaN technology to achieve low on-resistance and fast switching speeds. The device is designed to replace traditional silicon MOSFET pairs in half-bridge topologies, offering reduced component count and improved efficiency due to the absence of reverse recovery charge.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the 1.35 x 1.35 mm die size and the specific land pattern requirements. Ensure any replacement maintains the half-bridge configuration and meets the 100 V breakdown voltage requirement.

FET, MOSFET Arrays FAQ

What is the typical application circuit configuration for the EPC2106?

The EPC2106 is typically used in a half-bridge configuration, consisting of a high-side switch (Q1) and a low-side switch (Q2), driven by a level-shifted gate driver.

Does the EPC2106 have a body diode?

The EPC2106 does not have a parasitic body diode like silicon MOSFETs. However, it exhibits reverse conduction capability through its channel, resulting in zero reverse recovery charge (QRR).

What is the recommended gate drive voltage for the EPC2106?

The datasheet specifies a maximum gate-to-source voltage of +6 V and a minimum of -4 V. For optimal performance, a 5 V drive is typically used for the ON state, while 0 V is sufficient for the OFF state.