EPC2110

FET, MOSFET Arrays Overview

The EPC2110 is a dual common-source enhancement-mode gallium nitride (GaN) power transistor featuring two independent N-channel devices within a single die. It offers a drain-to-source voltage rating of 120 V and a continuous drain current of 3.4 A at 25°C, with a maximum on-resistance of 110 mΩ. The device utilizes a passivated bump-bonded die configuration measuring 1.35 x 1.35 mm. Key electrical characteristics include a gate threshold voltage of 1.4 V typical, total gate charge of 1.1 nC, and input capacitance of 100 pF. Thermal performance specifies a junction-to-case resistance of 3°C/W and a junction-to-ambient resistance of 81°C/W.

FET, MOSFET Arrays Feature Summary

• Dual common-source architecture enabling parallel connection or independent operation
• Lateral GaN structure providing zero reverse recovery charge
• Passivated die form factor with solder bumps for direct mounting

FET, MOSFET Arrays Applications

• Ultra high frequency DC-DC conversion
• Wireless power transfer systems
• Synchronous rectification circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific package type and handling requirements for bare die components. Ensure that assembly processes accommodate the passivated bump-bonded die format. Confirm moisture sensitivity level classifications and storage conditions prior to integration into manufacturing workflows.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high switching frequencies and low conduction losses in compact footprints. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values. Consider the dual-device layout for half-bridge or synchronous rectifier topologies where space efficiency is critical.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN FET family produced by Efficient Power Conversion. It represents a class of lateral GaN transistors designed to leverage high electron mobility for superior power density compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. Engineers should evaluate alternative GaN transistors based on matching voltage ratings, current capabilities, and thermal resistance specifications while verifying pinout compatibility.