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The EPC2619 is an enhancement-mode Gallium Nitride Field-Effect Transistor (eGaN FET) designed for high-frequency power conversion and motor drive applications. It features a 100 V drain-source breakdown voltage and a low on-resistance of 4.2 mΩ in a compact 6-lead LGA package. This component serves as the primary switching element in reference designs such as the EPC9159KIT bidirectional LLC converter and the EPC9193HCKIT BLDC motor drive inverter, enabling high power density and efficient operation in demanding environments.
Verify that the specific order corresponds to the EPC2619 part number rather than the associated evaluation kits like EPC9159KIT or EPC9193HCKIT. Confirm the package type is the 6-lead LGA configuration. Ensure compatibility with intended gate drivers and thermal management solutions before integration into final designs.
Select this device when a 100 V rating and low Rds(on) are required for high-efficiency switching. It is suitable for designs prioritizing miniaturization and high power density. Consider its performance in both synchronous buck and inverter configurations as demonstrated in official EPC reference designs.
The EPC2619 is a core component within the EPC eGaN FET family, specifically engineered for power management and motor control. It is integrated into development boards such as the EPC9159KIT for power conversion and the EPC9193 series for motor driving, highlighting its versatility in modern electronic systems requiring robust and compact semiconductor solutions.
No verified public substitute part numbers are available in the provided documentation.