EPC7007BSH

Overview

The EPC7007BSH is a radiation-hardened, single N-channel GaN power transistor designed for high-reliability environments. It features a drain-source voltage rating of 200 V and a continuous drain current of 24 A at case temperature. The device exhibits an ultra-low on-resistance ranging from 21 to 29 mΩ, ensuring high efficiency in power conversion applications. Packaged in the compact FSMD-B surface-mount format, it integrates a source sense pin for precise control. This component is engineered to withstand total ionizing dose ratings up to 300 krad, making it suitable for critical space and deep-space probe systems where robust performance under radiation exposure is mandatory.

Feature Summary

• Radiation-hardened design optimized for space and deep-space applications
• Ultra-low on-resistance for enhanced power conversion efficiency
• Integrated source sense pin for accurate gate drive control
• Compact hermetic package with low weight

Applications

• Space DC-DC power supplies
• Satellite motor drives
• Lidar systems
• Ion thrusters
• Deep space probes

Procurement Notes

Verify the specific screening level and radiation hardness certification details directly with EPC Space before procurement. Ensure that the FSMD-B package compatibility matches your PCB footprint requirements. Confirm that the operating environment aligns with the specified total ionizing dose ratings. Request official datasheets and quality documents to validate compliance with mission-critical standards. Cross-reference the part number suffix to confirm the exact electrical parameters and packaging configuration.

Selection Notes

Select the EPC7007BSH when radiation tolerance is a primary requirement for space-based electronics. Consider its 200 V rating and 24 A current capacity for medium-power switching applications. Evaluate the ultra-low QG characteristic if high-frequency operation is necessary for system efficiency. Compare the hermetic package benefits against non-hermetic alternatives for long-duration missions. Ensure thermal management strategies account for the surface-mount form factor.

Part Context

This component belongs to EPC Space's lineup of radiation-hardened GaN transistors. It shares architectural similarities with other rad-hard devices like the EPC7007CDA but offers distinct current and resistance specifications. The FSMD-B package provides a standardized interface for integration into satellite avionics and power systems. Its development focuses on reducing mass while maintaining high reliability in harsh orbital environments.

Replacement Considerations

Public confirmed substitute part numbers are not explicitly documented in the provided data. Verify cross-compatibility with existing designs by comparing pinout configurations and electrical limits. Consult EPC Space for recommended equivalents if redesigning hardware.