EPC7018GC

EPC7018GC

$237.80
  • Description:GAN FET HEMT 100V 90A COTS 5UB
  • Series:eGaN®

SKU:b591cdfdbcae Category: Brand:

  
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Product Detailed Parameters

  • Description:GAN FET HEMT 100V 90A COTS 5UB
  • Series:eGaN®
  • Mfr:EPC Space, LLC
  • Package:Bulk
  • Technology:GaN HEMT
  • Frequency:-
  • Gain:-
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:40 A
  • Power - Output:-
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-SMD, No Lead
  • Supplier Device Package:5-SMD
  • Configuration:N-Channel

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EPC7018GC

Overview

The EPC7018GC is a GaN HEMT power transistor from the FSMD-G series, designed for high-reliability applications. It features a drain-source voltage of 100V and a continuous drain current of 80A at case temperatures up to 25°C. The device exhibits a low on-resistance ranging from 4 to 6 mΩ. Packaged in a compact 5SMD form factor, it supports switching frequencies exceeding 1 MHz with simplified gate drive requirements.

Feature Summary

  • Ultra-low gate charge (QG) enables high efficiency operation
  • Compact hermetic package design suitable for critical environments
  • Logic level gate drive capability simplifies control circuitry

Applications

  • High reliability power switching systems
  • Applications requiring very high switching frequencies above 1 MHz
  • Systems demanding compact form factors and simplified gate drives

Procurement Notes

Verify component authenticity through authorized DiTom Microwave or EPC Space channels. Confirm RoHS3 compliance and EAR99 export classification status prior to acquisition. Ensure thermal management solutions support the specified 80A continuous drain current rating at the intended case temperature conditions.

Selection Notes

Select this component when high switching speeds and low on-resistance are critical. The 100V rating suits moderate voltage applications. Consider the 5SMD package for space-constrained designs. Verify gate drive compatibility due to logic-level input characteristics. Assess thermal performance against the 80A current specification.

Part Context

Part of the FSMD-G series eGaN power switching HEMTs. Designed for critical high-reliability applications. Manufactured by EPC Space, LLC. Utilizes advanced GaN technology for superior performance compared to traditional silicon devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer guidelines for direct replacements.

FAQ

What is the maximum continuous drain current?

The EPC7018GC supports a continuous drain current of 80A at case temperatures up to 25°C.

Does the device support high-frequency switching?

Yes, the EPC7018GC offers advantages in applications requiring very high switching frequencies greater than 1 MHz.

EPC7018GCEPC7018GC
$237.80
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