SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The EPC7018GC is a GaN HEMT power transistor from the FSMD-G series, designed for high-reliability applications. It features a drain-source voltage of 100V and a continuous drain current of 80A at case temperatures up to 25°C. The device exhibits a low on-resistance ranging from 4 to 6 mΩ. Packaged in a compact 5SMD form factor, it supports switching frequencies exceeding 1 MHz with simplified gate drive requirements.
Verify component authenticity through authorized DiTom Microwave or EPC Space channels. Confirm RoHS3 compliance and EAR99 export classification status prior to acquisition. Ensure thermal management solutions support the specified 80A continuous drain current rating at the intended case temperature conditions.
Select this component when high switching speeds and low on-resistance are critical. The 100V rating suits moderate voltage applications. Consider the 5SMD package for space-constrained designs. Verify gate drive compatibility due to logic-level input characteristics. Assess thermal performance against the 80A current specification.
Part of the FSMD-G series eGaN power switching HEMTs. Designed for critical high-reliability applications. Manufactured by EPC Space, LLC. Utilizes advanced GaN technology for superior performance compared to traditional silicon devices.
No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer guidelines for direct replacements.
The EPC7018GC supports a continuous drain current of 80A at case temperatures up to 25°C.
Yes, the EPC7018GC offers advantages in applications requiring very high switching frequencies greater than 1 MHz.