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The Infineon F3L100R12W2H3_B11 is a High Speed IGBT H3 module utilizing active Neutral Point Clamp 2 topology. It features PressFIT connection technology and an integrated NTC thermistor. The collector-emitter voltage (VCES) is 1200 V with a continuous DC collector current of 50 A at 100°C case temperature. The implemented collector current (ICN) is 100 A, and the repetitive peak collector current (ICRM) reaches 200 A. The typical collector-emitter saturation voltage (VCEsat) is 1.55 V at 25°C junction temperature. Total power dissipation is 375 W at 25°C case temperature. Operating junction temperature ranges from -40°C to +150°C.
Verify the exact ordering suffix against official documentation before purchase. Confirm that the specific variant matches the required electrical ratings and package dimensions. Ensure compliance with RoHS standards and check for any specific handling requirements related to the PressFIT assembly process during procurement.
Select this component for designs requiring high efficiency in three-level topologies. Evaluate thermal resistance values carefully to ensure adequate heat sinking. Consider the gate charge and internal gate resistance when designing the driver circuitry to optimize switching performance and minimize electromagnetic interference.
This module belongs to Infineon's EasyPACK series, designed for industrial and renewable energy applications. It integrates advanced silicon technology to provide robust performance in demanding power conversion environments. The part number indicates specific electrical and mechanical configurations within the broader product family.
Consult official replacement guides for compatible alternatives. Verify pin compatibility and thermal characteristics when substituting. Ensure that any replacement part meets or exceeds the original voltage and current ratings for safe operation.