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The F475R07W2H3B11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoPACK 3 TrenchStop™ 7 series. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25 °C. The component utilizes TrenchStop™ 7 technology to optimize switching performance and conduction losses. It integrates CoolSiC™ Schottky diodes for improved reverse recovery characteristics and includes an integrated NTC thermistor for precise thermal monitoring within power conversion systems.
Verify the specific ordering suffix against official Infineon documentation to ensure correct pinout and thermal interface specifications. Confirm RoHS compliance status through the manufacturer's latest product compliance declarations prior to integration into regulated equipment designs.
Select this module for applications requiring high power density and efficient thermal management in the 1200 V class. Ensure the cooling solution accommodates the thermal resistance characteristics defined in the datasheet. Validate that the gate drive requirements align with the switching speed capabilities of the TrenchStop™ 7 technology.
This component is part of Infineon's EconoPACK 3 family, designed for compact and robust power electronics. It succeeds previous generations by combining silicon IGBTs with silicon carbide diodes, offering a significant improvement in power density compared to standard silicon-only modules in similar packages.
Direct replacements must match the 1200 V / 75 A rating and EconoPACK 3 footprint. Verify compatibility of the integrated NTC thermistor curve and gate threshold voltages with existing control circuitry before substituting with other TrenchStop™ 7 variants.