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The FBG04N08ASH is a radiation-hardened enhancement-mode gallium nitride (eGaN) power switching HEMT manufactured by EPC Space, LLC. Designed for critical spaceborne applications, this single N-Channel device features a drain-to-source voltage rating of 40 V and a continuous drain current capability of 8 A at case temperature. The component utilizes the FSMD-A surface mount package to ensure high reliability in harsh environments.
Verify the specific suffix 'ASH' against the manufacturer's official datasheet to confirm exact radiation tolerance levels and testing standards. Ensure the FSMD-A package variant matches your PCB footprint requirements. Confirm that the 40V rating aligns with your system's maximum transient voltage specifications before procurement.
Select this component when designing for space applications requiring high radiation immunity and low thermal resistance. The 40V rating suits lower voltage bus architectures common in modern satellite payloads. Consider the 8A current limit relative to your peak load requirements and the thermal management capabilities of the FSMD-A package within your assembly.
This part belongs to the FBG series of rad-hard GaN Packaged HEMTs from EPC Space. It complements other variants like the FBG04N08AC and FBG10N05AC, offering specialized packaging options for different mechanical integration needs while maintaining the core benefits of eGaN technology in space-grade electronics.
Direct substitutes include the FBG04N08AC for similar electrical performance with potentially different packaging or qualification details. Verify pinout compatibility and radiation hardness levels when considering alternative EPC Space models or other rad-hard GaN providers.