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Product Detailed Parameters
- Description：GAN FET HEMT 40V30A COTS 4FSMD-B
- Series：eGaN®
- Mfr：EPC Space, LLC
- Package：Bulk
- Technology：GaN HEMT
- Frequency：-
- Gain：-
- Voltage - Test：20 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：30 A
- Power - Output：-
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：4-SMD
- Configuration：N-Channel
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Overview
The FBG04N30BC is a radiation-hardened enhancement-mode gallium nitride (GaN) high-electron-mobility transistor (HEMT) manufactured by EPC Space, LLC. It features a lateral die structure designed for high-reliability applications in space and power systems. Key electrical parameters include a drain-source voltage (VDS) of 40 V, a continuous drain current (ID) of 30 A at case temperature, and a maximum on-resistance (RDS(on)) of 11 mΩ. The device utilizes the FSMD-B surface-mount package.
Feature Summary
- Radiation-hardened design suitable for space environments
- Enhancement-mode GaN technology for reliable switching
- Lateral die structure enabling low gate charge and fast switching times
Applications
- Satellite power management systems
- High-reliability space electronics
- Rad-hard power supply switching circuits
Procurement Notes
Verify the specific ordering suffix and datasheet revision when sourcing this component. Confirm that the received part matches the exact radiation-hardened specification required for your mission profile. Contact EPC Space directly for official distribution channels and technical support regarding availability.
Selection Notes
Select this component for applications requiring radiation tolerance and high-speed switching capabilities within a 40 V system. Ensure thermal management aligns with the 30 A case temperature rating. Consider the FSMD-B package constraints for PCB layout and verify compatibility with existing drive circuits due to the enhancement-mode characteristics.
Part Context
This part belongs to EPC Space's portfolio of rad-hard GaN packaged HEMTs. It complements other devices like the FBG04N30BSH and EPC7001BC, targeting the niche market for high-reliability power solutions where standard commercial components would fail due to radiation exposure.
Replacement Considerations
For P-channel replacements, contact [email protected] directly as no direct substitute is listed. Verify pinout and thermal requirements before considering any alternative manufacturers.
