FBG10N05AC

$218.76

Description：GAN FET HEMT 100V5A COTS 4FSMD-A
Series：eGaN®

SKU:466c8219a55b Category: RF FETs, MOSFETs Brand: EPC Space, LLC

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Product introduction

Product Detailed Parameters

Description：GAN FET HEMT 100V5A COTS 4FSMD-A
Series：eGaN®
Mfr：EPC Space, LLC
Package：Bulk
Technology：GaN HEMT
Frequency：-
Gain：-
Voltage - Test：50 V
Current Rating (Amps)：250µA
Noise Figure：-
Current - Test：5:00 AM
Power - Output：-
Voltage - Rated：100 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：4-SMD
Configuration：N-Channel

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FBG10N05AC

Overview

The FBG10N05AC is a radiation-hardened enhancement-mode Gallium Nitride (GaN) Field-Effect Transistor manufactured by EPC Space, LLC. It features an N-channel configuration with a drain-to-source voltage rating of 100 V and a continuous current capacity of 5 A at case temperature. The device exhibits a typical on-resistance of 58 mΩ. It is housed in a surface-mount FSMD-A package, designed for high-reliability applications requiring resistance to ionizing radiation.

Feature Summary

Radiation-hardened design suitable for space environments
Enhancement-mode GaN technology for efficient power switching
Surface-mount packaging for automated assembly

Applications

Satellite power management systems
High-reliability aerospace electronics
Spacecraft subsystem power conversion

Procurement Notes

Verify the specific screening level and quality documentation required for your mission profile before procurement. Confirm that the FSMD-A package variant matches your PCB footprint requirements. Ensure compatibility with radiation tolerance specifications defined by your system architecture. Request official datasheets and test reports from authorized distributors to validate component authenticity and performance history.

Selection Notes

Select this component when radiation hardness is mandatory for the operating environment. Consider the 100 V voltage rating and 5 A current limit against load requirements. Evaluate the thermal performance of the FSMD-A package within the system's cooling constraints. Compare total cost of ownership including qualification efforts against standard commercial alternatives.

Part Context

EPC Space specializes in radiation-hardened GaN-on-silicon transistors for satellites and high-reliability power systems. The FBG10N05AC belongs to their portfolio of enhanced-reliability discrete devices engineered for harsh environments where traditional silicon components may fail due to radiation effects.