FBG10N05ASH

Overview

The FBG10N05ASH is a radiation-hardened enhancement-mode Gallium Nitride (GaN) Field-Effect Transistor manufactured by EPC Space, LLC. It features an N-channel configuration with a drain-to-source voltage rating of 100 V and a continuous drain current of 5 A at case temperature. The device exhibits a maximum on-resistance of 58 mΩ and a gate charge of 2.2 nC at 5 V. Designed for space applications, it operates within a junction temperature range of -55°C to 150°C and utilizes the FSMD-A surface-mount package measuring 3.3 x 3.3 mm.

Feature Summary

• Radiation-hardened design suitable for space environments
• Enhancement-mode GaN technology for high reliability
• Surface-mount FSMD-A package for compact integration

Applications

• Space power management systems
• Radiation-tolerant electronic circuits
• High-reliability power switching applications

Procurement Notes

Verify component authenticity through authorized EPC Space distributors. Confirm specific screening levels and quality documentation requirements for mission-critical deployments. Ensure handling procedures comply with electrostatic discharge protocols for sensitive semiconductor devices.

Selection Notes

Select this component when radiation hardness is required for space-grade operations. Consider the 100 V rating and 5 A current capacity against system load requirements. Evaluate the FSMD-A package dimensions for PCB layout constraints and thermal management needs in confined spaces.

Part Context

This part belongs to the eGaN series of single FETs from EPC Space, LLC. It represents a specialized line of gallium nitride transistors engineered specifically for harsh radiation environments, distinguishing it from standard commercial GaN devices through enhanced structural integrity and testing protocols.

Replacement Considerations

No public confirmed substitute part numbers are available.