FBG10N30BC

Overview

The FBG10N30BC is a single N-channel eGaN power switching HEMT from EPC Space, LLC. It features a 100 V drain-source voltage and a continuous current rating of 30 A at case temperature. The device exhibits a typical on-resistance of 16 mΩ. Designed for high-reliability environments, it utilizes Gallium Nitride technology in a surface-mount FSMD-B package measuring approximately 5.4 x 3.6 mm.

Feature Summary

• Utilizes radiation-hardened Gallium Nitride (eGaN) technology for enhanced reliability
• Designed specifically for critical applications in space and avionics systems
• Features ultra-low on-resistance to support high-density power conversion

Applications

• Satellite power systems
• Avionics equipment
• Deep space probes

Procurement Notes

Verify the specific ordering suffix 'BC' against the manufacturer's official documentation to ensure correct configuration. Confirm that the FSMD-B package dimensions and thermal characteristics align with your design requirements before procurement.

Selection Notes

Select this component for applications requiring radiation immunity and high reliability. Ensure the system can accommodate the surface-mount FSMD-B package size and verify thermal management capabilities for the 30 A current rating.

Part Context

This part belongs to the FSMD-B series of eGaN power switching HEMTs. The series is engineered for critical space and high-reliability applications, offering a compact form factor suitable for dense electronic assemblies in aerospace environments.

Replacement Considerations

Consult official substitution lists for compatible radiation-hardened GaN transistors with matching voltage and current ratings.