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The FBG20N04ASH is an N-Channel enhancement-mode Gallium Nitride (GaN) field-effect transistor manufactured by EPC Space, LLC. Designed for high-reliability applications, this device features a drain-source voltage rating of 200 V and a continuous drain current of 4 A at case temperature. The component exhibits a typical on-resistance of 130 mΩ. It utilizes a surface-mount FSMD-A package configuration, specifically a 4-SMD no-lead format, facilitating integration into compact power management systems requiring robust performance.
Verify the specific ordering suffix to confirm the exact screening level and radiation hardness qualification required for your mission profile. Ensure that the FSMD-A package dimensions align with your PCB footprint design. Confirm that the thermal characteristics meet your system's heat dissipation requirements before finalizing procurement decisions.
Select this component when designing systems that require intrinsic radiation tolerance and high-frequency switching capabilities. The 200 V rating and 4 A current capacity define its operational envelope. Consider the surface-mount form factor for automated assembly processes. Evaluate the trade-off between the 130 mΩ resistance and system efficiency needs against alternative discrete solutions.
This part belongs to the EPC Space e-GaN series, which specializes in radiation-hardened transistors for aerospace use. Unlike standard commercial GaN devices, these components are engineered to withstand ionizing radiation effects common in orbital environments. The series provides a reliable foundation for critical infrastructure where failure is not an option.
Direct substitutes include other parts within the EPC Space FBG20N series, such as the FBG20N04AC, which shares similar electrical parameters but may differ in packaging or screening levels. Verify compatibility regarding pinout and thermal resistance before swapping components.