FBG20N04ASH

FBG20N04ASH

$310.66
  • Description:GAN FET HEMT 200V 4A 4FSMD-A
  • Series:eGaN®

SKU:84b218a5058a Category: Brand:

  
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Product Detailed Parameters

  • Description:GAN FET HEMT 200V 4A 4FSMD-A
  • Series:eGaN®
  • Mfr:EPC Space, LLC
  • Package:Bulk
  • Technology:GaN HEMT
  • Frequency:-
  • Gain:-
  • Voltage - Test:100 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:4:00 AM
  • Power - Output:-
  • Voltage - Rated:200 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:4-SMD
  • Configuration:N-Channel

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FBG20N04ASH

Overview

The FBG20N04ASH is an N-Channel enhancement-mode Gallium Nitride (GaN) field-effect transistor manufactured by EPC Space, LLC. Designed for high-reliability applications, this device features a drain-source voltage rating of 200 V and a continuous drain current of 4 A at case temperature. The component exhibits a typical on-resistance of 130 mΩ. It utilizes a surface-mount FSMD-A package configuration, specifically a 4-SMD no-lead format, facilitating integration into compact power management systems requiring robust performance.

Feature Summary

  • Utilizes radiation-hardened GaN-on-silicon technology for enhanced durability in harsh environments
  • Features enhancement-mode operation with low on-resistance for efficient power switching
  • Designed as a single FET suitable for high-performance space and satellite power applications

Applications

  • Satellite power management systems
  • High-reliability space electronics
  • Radiation-hardened power conversion circuits

Procurement Notes

Verify the specific ordering suffix to confirm the exact screening level and radiation hardness qualification required for your mission profile. Ensure that the FSMD-A package dimensions align with your PCB footprint design. Confirm that the thermal characteristics meet your system's heat dissipation requirements before finalizing procurement decisions.

Selection Notes

Select this component when designing systems that require intrinsic radiation tolerance and high-frequency switching capabilities. The 200 V rating and 4 A current capacity define its operational envelope. Consider the surface-mount form factor for automated assembly processes. Evaluate the trade-off between the 130 mΩ resistance and system efficiency needs against alternative discrete solutions.

Part Context

This part belongs to the EPC Space e-GaN series, which specializes in radiation-hardened transistors for aerospace use. Unlike standard commercial GaN devices, these components are engineered to withstand ionizing radiation effects common in orbital environments. The series provides a reliable foundation for critical infrastructure where failure is not an option.

Replacement Considerations

Direct substitutes include other parts within the EPC Space FBG20N series, such as the FBG20N04AC, which shares similar electrical parameters but may differ in packaging or screening levels. Verify compatibility regarding pinout and thermal resistance before swapping components.

FBG20N04ASHFBG20N04ASH
$310.66
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