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The FBG20N18BSH is an N-Channel Gallium Nitride (eGaN) Field Effect Transistor manufactured by EPC Space, LLC. It belongs to the FSMD-B series designed for high-reliability applications in space and other critical environments. The device features a drain-source voltage rating of 200 V and a continuous drain current of 18 A at case temperature. Its on-resistance ranges from 24 to 30 mΩ. The component utilizes a 4-SMD no-lead package with surface mount technology. It operates within a junction temperature range of -55°C to 150°C and requires a drive voltage of 5 V.
Verify part authenticity through authorized EPC Space distributors. Confirm datasheet revisions match project requirements. Ensure storage conditions comply with moisture sensitivity levels. Validate thermal management design against specified junction temperature limits. Check for specific handling instructions regarding the no-lead surface mount package.
Select this component when high reliability in radiation or vacuum environments is required. The 200 V rating suits medium-voltage DC-DC converters. Consider the 18 A current capability for moderate power levels. The 5 V drive voltage simplifies gate driver selection. Evaluate thermal performance given the small footprint and high current density.
This part is part of the FSMD-B series from EPC Space, LLC. It complements other eGaN devices like the FBG20N04ASH. The series targets customers needing robust GaN solutions. It differs from standard silicon MOSFETs in switching speed and reliability. The company focuses on space-grade semiconductor components.
Direct substitutes include variants within the same FSMD-B series such as FBG20N18B. Verify pinout compatibility before substitution. Check if alternative parts meet the same space qualification standards. Ensure electrical parameters like Rds(on) and Vgs(th) are within acceptable tolerances.