FBG20N18BSH

FBG20N18BSH

$310.66
  • Description:GAN FET HEMT 200V 18A 4FSMD-B
  • Series:eGaN®

SKU:75c0ffff9304 Category: Brand:

  
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Product Detailed Parameters

  • Description:GAN FET HEMT 200V 18A 4FSMD-B
  • Series:eGaN®
  • Mfr:EPC Space, LLC
  • Package:Bulk
  • Technology:GaN HEMT
  • Frequency:-
  • Gain:-
  • Voltage - Test:100 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:18 A
  • Power - Output:-
  • Voltage - Rated:200 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:4-SMD
  • Configuration:N-Channel

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FBG20N18BSH

Overview

The FBG20N18BSH is an N-Channel Gallium Nitride (eGaN) Field Effect Transistor manufactured by EPC Space, LLC. It belongs to the FSMD-B series designed for high-reliability applications in space and other critical environments. The device features a drain-source voltage rating of 200 V and a continuous drain current of 18 A at case temperature. Its on-resistance ranges from 24 to 30 mΩ. The component utilizes a 4-SMD no-lead package with surface mount technology. It operates within a junction temperature range of -55°C to 150°C and requires a drive voltage of 5 V.

Feature Summary

  • Utilizes eGaN power switching HEMT technology specifically engineered for high reliability
  • Designed for critical applications in space and demanding operational environments
  • Features surface mount packaging suitable for automated assembly processes

Applications

  • Spacecraft power systems
  • High-reliability power conversion
  • Critical aerospace electronics

Procurement Notes

Verify part authenticity through authorized EPC Space distributors. Confirm datasheet revisions match project requirements. Ensure storage conditions comply with moisture sensitivity levels. Validate thermal management design against specified junction temperature limits. Check for specific handling instructions regarding the no-lead surface mount package.

Selection Notes

Select this component when high reliability in radiation or vacuum environments is required. The 200 V rating suits medium-voltage DC-DC converters. Consider the 18 A current capability for moderate power levels. The 5 V drive voltage simplifies gate driver selection. Evaluate thermal performance given the small footprint and high current density.

Part Context

This part is part of the FSMD-B series from EPC Space, LLC. It complements other eGaN devices like the FBG20N04ASH. The series targets customers needing robust GaN solutions. It differs from standard silicon MOSFETs in switching speed and reliability. The company focuses on space-grade semiconductor components.

Replacement Considerations

Direct substitutes include variants within the same FSMD-B series such as FBG20N18B. Verify pinout compatibility before substitution. Check if alternative parts meet the same space qualification standards. Ensure electrical parameters like Rds(on) and Vgs(th) are within acceptable tolerances.

FBG20N18BSHFBG20N18BSH
$310.66
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