ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The FCD380N60E is a single N-channel enhancement mode MOSFET manufactured by onsemi using silicon technology. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 10.2 A. The device exhibits a maximum on-resistance (Rds(on)) of 380 mΩ at specified gate-source voltages. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 106 W. The component is housed in a surface-mount DPAK package with three pins.
Feature Summary
- Utilizes an N-channel enhancement mode architecture for efficient switching control.
- Designed for high-voltage applications with a 600 V breakdown capability.
- Optimized for low conduction losses through minimized on-resistance characteristics.
Applications
- General-purpose power switching circuits
- DC-DC converter topologies
- Motor drive systems
Procurement Notes
Verify the specific datasheet revision and compliance documentation directly from onsemi before integration. Confirm that the DPAK package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 106 W power dissipation rating under your specific operating conditions. Check for any recent product change notifications regarding material composition or manufacturing site changes.
Selection Notes
Select this component when a robust N-channel MOSFET with 600 V blocking capability is required in a compact surface-mount form factor. The 380 mΩ on-resistance offers a balance between conduction loss and cost for moderate current applications up to 10.2 A. Consider the DPAK package's thermal performance relative to your heat sinking strategy. Compare against other SuperFET II series devices if lower on-resistance or different packaging options are needed for higher efficiency designs.
Part Context
This part belongs to onsemi's portfolio of discrete power semiconductors designed for energy infrastructure and industrial applications. It falls under the broader category of silicon-based MOSFETs used in power conversion systems. The device supports the transition toward more efficient renewable energy systems and electric vehicle charging infrastructure by providing reliable switching performance in a standardized package format.
Replacement Considerations
No verified public substitute part numbers are available in the provided source material. Consult onsemi technical support for direct replacements or pin-compatible alternatives with similar electrical specifications.
