FCHD190N65S3R0-F155

$1.88

Description：MOSFET N-CH 650V 17A TO247
Series：SuperFET® III
Mfr：onsemi
Package：Tube,Tube

SKU:65b1077a3a6d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 17A TO247
Series：SuperFET® III
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：144W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCHD190N65S3R0-F155

Overview

The onsemi FCHD190N65S3R0-F155 is an N-Channel MOSFET from the SuperFET III series, featuring a 650 V drain-source voltage and 17 A continuous drain current. It utilizes a TO-247-3 through-hole package with a maximum power dissipation of 144 W at case temperature. Key electrical parameters include a 0.19 Ω typical on-resistance, 34 nC gate charge, and -30 V to +30 V gate-source voltage range. The device operates between -55°C and +150°C junction temperature.

Feature Summary

SuperFET III technology integrates synchronous rectification for reduced switching losses
Optimized low on-resistance for improved conduction efficiency
Robust avalanche energy capability for enhanced reliability

Applications

High-frequency power supplies
Industrial motor drives
Uninterruptible power systems

Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm tape-and-reel packaging requirements. Ensure thermal management designs account for the 144 W case dissipation limit. Confirm RoHS compliance status directly with manufacturer documentation prior to procurement.

Selection Notes

Select this component for applications requiring high-voltage isolation with efficient synchronous rectification. Compare gate charge values against driver capabilities to ensure optimal switching performance. Evaluate thermal resistance characteristics relative to the intended heat sink configuration.

Part Context

This part belongs to the SuperFET III family, which combines a lateral driver with a vertical power MOSFET. This integration reduces external gate drive requirements while maintaining high switching speeds. The TO-247 package provides robust mechanical stability for industrial environments.