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Product Detailed Parameters
- Description：MOSFET N-CH 650V 17A POWER88
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Power88
- Package / Case：4-PowerTSFN
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Overview
The FCMT180N65S3 is a single N-channel power MOSFET from the SuperFET III family, manufactured by onsemi. It features a 650 V drain-source voltage rating and a continuous drain current of 17 A at case temperature. The device exhibits a maximum on-resistance of 180 mΩ. Packaged in a compact PQFN-4 surface-mount format, it integrates an Easy Drive gate structure to optimize switching performance. Key electrical parameters include a gate charge of 29 nC, a threshold voltage of 4.5 V, and a power dissipation capacity of 120 W at 25°C case temperature.
Feature Summary
- SuperFET III technology utilizing charge balance for low conduction and switching losses
- Integrated Easy Drive gate architecture for enhanced dv/dt immunity and simplified driving
- Low profile PQFN-4 package design supporting efficient thermal management
Applications
- AC/DC power conversion systems
- High-frequency DC/DC converters
- Industrial motor control applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and tape-and-reel specifications. Ensure that the procurement documentation explicitly references the SuperFET III series characteristics. Cross-reference the part number with the latest onsemi release notes to confirm component authenticity and manufacturing origin details before finalizing acquisition.
Selection Notes
Select this component when system requirements demand high efficiency in hard-switching topologies. The integrated gate drive reduces external component count and improves reliability compared to discrete solutions. Evaluate the thermal resistance capabilities of the PQFN-4 package against the expected operating junction temperatures to ensure adequate heat dissipation without excessive heatsinking requirements.
Part Context
This device belongs to the SuperFET III portfolio, representing onsemi's advanced superjunction MOSFET technology. The series focuses on minimizing figure-of-merit metrics through optimized cell density and gate engineering. The FCMT180N65S3 specifically targets mid-power applications requiring robust performance within space-constrained surface-mount layouts.
Replacement Considerations
Direct substitutes within the same series include FCMT125N65S3 for lower resistance or FCMT360N65S3 for higher current capability. Verify pin compatibility and thermal pad dimensions when considering cross-series replacements to maintain board layout integrity.
