FCP11N60N

$1.39

Description：POWER FIELD-EFFECT TRANSISTOR, 1
Series：SupreMOS™
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:8949b3ae9825 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：POWER FIELD-EFFECT TRANSISTOR, 1
Series：SupreMOS™
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：94W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP11N60N

Overview

The FCP11N60N is an N-channel enhancement-mode MOSFET from the SuperFET series, utilizing charge balance technology for high-voltage applications. It features a maximum drain-source voltage of 600 V and a continuous drain current of 11 A at 25°C case temperature. The device exhibits a typical on-resistance of 380 mΩ and a low gate charge of 40 nC at 10 V. Rated for a power dissipation of 36 W in a TO-220F package, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

SuperFET architecture employs charge balance technology to minimize conduction losses while maintaining excellent switching performance.
Optimized low gate charge and output capacitance characteristics facilitate faster switching speeds and reduced dynamic losses.
High avalanche energy capability ensures robust reliability under transient stress conditions.

Applications

Power factor correction circuits
Server and telecommunications power supplies
Flat panel television power systems

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with thermal management requirements for the TO-220F form factor. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Selection Notes

Select this component for designs requiring efficient high-voltage switching with moderate current handling capabilities. The low gate charge reduces driver complexity compared to standard MOSFETs. Evaluate thermal resistance parameters to ensure adequate heat sinking for sustained operation within the specified temperature limits.

Part Context

This device belongs to the Fairchild SuperFET family, representing early superjunction technology implementations. It serves as a discrete power switch alternative to integrated controllers in standalone converter topologies. The part bridges the gap between low-power logic-level devices and heavy-duty industrial switches.