ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 16A TO220-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.3 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：134.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The FCP16N60N is a 600V, 16A N-channel Power MOSFET from onsemi. It utilizes the Super Junction technology to achieve low on-resistance and high switching efficiency. The device features a TO-247AD package for robust thermal performance. Key electrical parameters include a drain-source voltage of 600V, continuous drain current of 16A at 25°C, and a maximum power dissipation of 200W. The typical on-state resistance is 0.38 ohms.
Feature Summary
- Super Junction technology for enhanced efficiency
- Low gate charge for fast switching
- Robust avalanche capability
- High temperature stability
Applications
- High-frequency power supplies
- Motor control applications
- DC-DC converters
- Industrial power systems
Procurement Notes
Verify the exact part number suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements as stated in the latest datasheet revision. Check for any specific handling instructions related to electrostatic discharge protection during storage and assembly processes.
Selection Notes
Select this component when high voltage blocking capability and moderate current handling are required in compact designs. Consider the thermal resistance characteristics for heatsink sizing in high-power environments. Evaluate the switching losses relative to system efficiency targets compared to alternative technologies like IGBTs or standard MOSFETs.
Part Context
This device belongs to onsemi's FCP series of Super Junction MOSFETs designed for high-efficiency power conversion. The series aims to reduce conduction and switching losses in medium-voltage applications. It serves as an upgrade path for legacy silicon MOSFETs requiring improved performance metrics.
Replacement Considerations
Consult onsemi's official cross-reference tools for verified substitutes. Ensure replacement parts match the 600V rating and TO-247AD package dimensions. Verify pinout compatibility and thermal characteristics before implementation.
