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Product Detailed Parameters
- Description：MOSFET N-CH 650V 17A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：144W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP190N65S3R0 is a single N-channel power MOSFET from the SUPERFET III family, designed for high-voltage applications. It features a 650V drain-source voltage rating and a maximum continuous drain current of 17A at case temperature. The device exhibits a typical on-resistance of 190mΩ. Packaged in a TO-220-3 through-hole configuration, it integrates an Easy Drive structure to optimize switching performance and electromagnetic interference characteristics.
Feature Summary
- Integrates SUPERFET III technology utilizing charge balance architecture for optimized conduction and switching efficiency.
- Incorporates an Easy Drive gate structure designed to facilitate driver compatibility and reduce electromagnetic interference emissions.
- Features a robust body diode engineered for low reverse recovery charge and soft recovery characteristics.
Applications
- High-frequency switched-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify the specific suffix R0 against the target bill of materials to ensure correct packaging format. Confirm that the TO-220-3 lead form matches the PCB footprint requirements. Cross-reference the thermal resistance values with the system's heatsinking strategy to validate junction temperature limits under expected load conditions.
Selection Notes
Select this component when a 650V rating is required alongside moderate current handling capabilities. The 190mΩ on-resistance offers a balance between conduction losses and cost for medium-power designs. Ensure the application benefits from the integrated Easy Drive feature for simplified gate drive circuit design and improved noise immunity.
Part Context
This part belongs to the FCP series of high-voltage superjunction MOSFETs manufactured by onsemi. The series utilizes advanced silicon processes to achieve superior figure-of-merit compared to conventional planar technologies. The FCP190N65S3R0 specifically targets the TO-220 package segment for reliable through-hole mounting in industrial and consumer power electronics.
Replacement Considerations
Direct substitutes include FCP190N65S3 and FCP190N65S3L1. Verify pinout compatibility and thermal specifications before substitution. Note that alternative packages such as TO-247AD variants like FCHD190N65S3R0 offer different thermal profiles but require mechanical adaptation.
