FCP7N60

$2.68

Description：MOSFET N-CH 600V 7A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:fc9a209ee670 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 7A TO220-3
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP7N60

Overview

The FCP7N60 is a single N-channel enhancement mode power MOSFET from onsemi's SuperFET series, housed in a TO-220-3 through-hole package. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 7 A at 25°C. The device exhibits a maximum on-resistance of 530 mΩ at VGS = 10 V and a gate charge of 30 nC. Electrical characteristics include a threshold voltage of 3 V, a forward transconductance of 6 S, and switching times with rise and fall durations of 55 ns and 32 ns respectively. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 83 W.

Feature Summary

SuperFET technology integration for optimized switching performance
High-voltage capability suitable for robust power applications
Through-hole mounting configuration for secure mechanical attachment

Applications

General purpose power switching circuits
DC-DC converter topologies
Motor control systems

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure component authenticity. Confirm that the TO-220-3 package dimensions match your PCB footprint requirements. Check RoHS compliance status against current regulatory standards before finalizing procurement decisions.

Selection Notes

Select this component when a 600V rated N-channel MOSFET with moderate current handling is required. The 530 mΩ on-resistance offers a balance between conduction losses and cost. Ensure the thermal management design accommodates the 83 W dissipation rating under expected operating conditions.

Part Context

This part belongs to the FCP7N60 series of high-voltage silicon MOSFETs manufactured by onsemi. It shares technical similarities with other SuperFET devices but is distinct due to its specific pinout and package type. The series targets general industrial and consumer power supply applications requiring reliable high-voltage switching.