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Product Detailed Parameters
- Description：TRANS MOSFET N-CH 600V 11A 3PIN(
- Series：SuperFET™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF11N65 is an N-channel Power MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage switching applications. It features a 650V drain-source breakdown voltage and supports a continuous drain current of 11A at case temperature. The device utilizes SuperFET II technology to minimize conduction loss and enhance switching performance. Key electrical parameters include a maximum on-resistance of 380mΩ at 10V gate drive and an input capacitance of 1.49nF. It is housed in a TO-220-3 through-hole package with a power dissipation rating of 36W.
Feature Summary
- SuperFET II technology minimizes conduction loss and provides superior switching performance
- Designed to withstand extreme dv/dt rates and higher avalanche energy
- Optimized for low on-resistance to reduce thermal stress in high-voltage circuits
Applications
- High-voltage DC-DC converters
- Power factor correction (PFC) circuits
- Industrial motor control systems
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing, as manufacturing processes or packaging details may vary between production lots. Confirm that the component meets the required RoHS compliance standards for your assembly process. Ensure the supplier provides traceability documentation consistent with Fairchild Semiconductor's quality assurance protocols for discrete semiconductors.
Selection Notes
Select this component for designs requiring robust high-voltage handling with moderate current capacity. The TO-220-3 package facilitates efficient heat dissipation for through-hole mounting. Consider the 380mΩ on-resistance when calculating thermal management requirements for continuous operation at 11A. This device is suitable where SuperFET II benefits, such as reduced switching losses, are critical for system efficiency.
Part Context
This part belongs to Fairchild's SuperFET II family, which integrates advanced trench gate technology with optimized body diode characteristics. The series is engineered for hard-switching applications where reliability under high voltage stress is paramount. The FCPF11N65 represents a balance between blocking voltage capability and conduction efficiency for general-purpose power electronics.
Replacement Considerations
Direct substitutes must match the 650V rating, N-channel configuration, and TO-220-3 package. Verify that alternative components offer comparable Rds(on) and avalanche energy ratings to ensure circuit compatibility without redesign.
